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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.
2N7000 Datasheet
