2N7000G
Key Features
- Low Qg uc
- Low threshold drive rod Application te P
- Switching applications ole Description bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - strip-based process. The resulting transistor ) shows extremely high packing density for low ont(s resistance, rugged avalanche characteristics and c less critical alignment steps therefore a u remarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure
- Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table
- Device summary Order codes 2N7000 2N7002 Marking 2N7000G ST2N Package TO-92 SOT23-3L Packaging Bulk Tape and reel November 2008 Rev 9 1/14 14 Contents Contents