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2N7000G - N-Channel MOSFET

Download the 2N7000G datasheet PDF. This datasheet also covers the 2N7000 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - strip-based process.

Key Features

  • Type VDSS RDS(on) max ID 2N7000 ) 2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s.
  • Low Qg uc.
  • Low threshold drive rod.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7000_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 ) 2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s ■ Low Qg uc ■ Low threshold drive rod Application te P ■ Switching applications ole Description bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - strip-based process. The resulting transistor ) shows extremely high packing density for low ont(s resistance, rugged avalanche characteristics and c less critical alignment steps therefore a u remarkable manufacturing reproducibility. 3 2 1 SOT23-3L TO-92 Figure 1. Internal schematic diagram Obsolete Prod SOT23-3L TO-92 Table 1.