Datasheet Details
| Part number | 2N7000 |
|---|---|
| Manufacturer | TAITRON |
| File Size | 300.46 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 2N7000 Datasheet
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General Description
2N7000
VDSS
Drain-Source Voltage
60
VDGR
Drain-Gate Voltage (RGS≤1MΩ)
60
VGSS
ID IDP
Gate-Source Voltage Drain Current
Continuous Non Repetitive (tp
Key Features
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.
- RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.