2N7000 Datasheet N-channel MOSFET

Manufacturer: TAITRON

Overview: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	2N7000
Manufacturer	TAITRON
File Size	300.46 KB
Description	N-Channel MOSFET
Datasheet	2N7000-TAITRON.pdf

General Description

2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation 400 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V V mA mA mW °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev.

B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor Equivalent Circuit 2N7000 This transistor is electrostatic sensitive device.

Please handle with caution.

Key Features

High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.

2N7000 Distributor & Price

Compare 2N7000 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Part Number	Description	Manufacturer
2N7000	N-Channel DMOS FET	Microchip
2N7000	TMOS FET Transistor	Motorola Inc
2N7000	N-channel MOSFET	NXP
2N7000	N-Channel MOSFET	NTE
2N7000	N-Channel MOSFET	INCHANGE

More Datasheets from TAITRON

Part Number	Description
2N7000K	N-channel MOSFET
2N7002E	MOSFET
2N7002KDWS	Double N-Channel MOSFET