2N7000 Overview
Key Specifications
Height: 8.77 mm
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Representative 2N7000 image (package may vary by manufacturer)
Description
2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation 400 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V V mA mA mW °C °C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor Equivalent Circuit 2N7000 This transistor is electrostatic sensitive device.
Key Features
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram
