2N7000 Datasheet PDF

FEATURES

● High density cell design for low RDS(ON)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
● RoHS compliance

MECHANICAL DATA

TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram

MAXIMUM RATINGS

(T Ambient=25ºC unless noted otherwise) Symbol

DESCRIPTION

2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation 400 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V V mA mA mW °C °C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor Equivalent Circuit 2N7000 This transistor is electrostatic sensitive device. Please handle with caution. Electric...