2N7000 Datasheet | Taitron Components

Features - High density cell design for low RDS(ON) - Voltage controlled small signal switch - Rugged and reliable - High saturation current capability - Ro HS pliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS≤1MΩ) VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation TJ Junction Temperature TSTG Storage Temperature Range -55 to +150 Unit V V V V m A m A m W °C °C TAITRON PONENTS INCORPORATED .taitronponents. Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor Equivalent Circuit This transistor is electrostatic sensitive device. Please handle with...