2N7000K
Description
2N7000K VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current IDP Continuous Pulsed (Note 1) 500 2000 PD Drain Power Dissipation 625 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Note 1: Pulse Width<10µs, Duty Cycle<1% Unit V V mA mA mW °C °C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415.
Key Features
- ESD protected 2000V
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- RoHS compliance TO-92 Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram
