Datasheet Summary
N-Channel MOSFET ESD Protected 2000V Transistor
N-Channel MOSFET ESD Protected 2000V Transistor
Features
- ESD protected 2000V
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- RoHS pliance
TO-92
Mechanical Data
Case: Terminals:
Weight:
TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
±20
Drain Current
Continuous Pulsed (Note 1)
500 2000
PD Drain Power Dissipation
TJ Junction...
