Datasheet Details
| Part number | 2N7000K |
|---|---|
| Manufacturer | TAITRON |
| File Size | 289.26 KB |
| Description | N-channel MOSFET |
| Datasheet |
 2N7000K Datasheet
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General Description
2N7000K
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current
IDP
Continuous Pulsed (Note 1)
500 2000
PD Drain Power Dissipation
625
TJ Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Note 1: Pulse Width
Key Features
- ESD protected 2000V.
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.
- RoHS compliance TO-92 Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol.