| Part Number | 2N7000 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2N7000
·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-L.
*With TO-92 package *Low input capacitance and gate charge *Low gate input resistance *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *Load switch *Power management *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S. |
2N7000 Datasheet
The 2N7000 is a N-Channel MOSFET.
| Part Number | 2N7000 |
|---|---|
| Description | Small Signal MOSFET |
| Manufacturer | WEITRON |
| Overview | WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2. *Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1 SOURCE 2N7000 TO-92 1. SOURCE 2. GATE 3. DRAIN 1 2 3 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Sou. |
| Part Number | 2N7000 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance.
* High Density Cell Design for Low RDS(on) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability * ESD Protection Level: HBM > 100 V, CDM > 2 kV * This Device is Pb *Free and Halogen Free DATA SHEET www.onsemi.com D G S 123 TO *92 CASE 135AN 1 2 3 1 * . |
| Part Number | 2N7000 |
|---|---|
| Description | N-Channel 60V MOSFET |
| Manufacturer | Vishay |
| Overview | 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) 2N7000 2N7002 VQ1000J VQ1000P BS170 5 @ VGS = 10 V 7.5 @ . D Low On-Resistance: 2.5 W D Low Threshold: 2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage BENEFITS D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffer D High-Speed Circuits D Low Error Voltage APPLICATIONS D Direct Logic-Le. |