NXP Semiconductors 2N7000
N-channel MOSFET
| Part No. | 2N7000 |
|---|---|
| Datasheet | 2N7000 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on)● Direct interface to C-MOS, TTL, etc.
● High-speed switching
● No secondary breakdown.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - TO-92 VARIANT handbook, halfpage 2N7000 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 500 mA VGS = 10 V ID = 1 mA VGS = VDS CONDITIONS MAX. 60 280 5 3 UNIT V mA Ω V PIN CONFIGURATION d PIN 1 2 3 drain gateDESCRIPTION
1 2 3 g source MAM146 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VDG ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain current drain cu...
