Datasheet4U.com

2N7000 Datasheet PDF

Motorola 2N7000

TMOS FET Transistor

Part No. 2N7000
Datasheet 2N7000 Download
Manufacturer
Motorola
Description TMOS FET Transistor
Buy Stock & Price
2N7000 datasheet page 1 preview

MAXIMUM RATINGS

Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 – 55 to +150 mW mW/°C °C Unit Vdc Vdc Vdc Vpk mAdc CASE 29–04, STYLE 22 TO–92 (TO–226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds Symbol RθJA TL Max 357 300 Unit °C/W °C

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate–Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS — — IGSSF — 1.0 1.
2N7000 page 2 preview 2N7000 page 3 preview