Datasheet Summary
2N7000 / 2N7002 / NDS7002A
- N-Channel Enhancement Mode Field Effect Transistor
August 2016
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
Description
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed...
