2N7000 Description
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2.
2N7000 Key Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability