2N7000TU Datasheet | onsemi

MOSFET - Advanced Small-Signal 2N7000BU / 2N7000TA Description These N- channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on- state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low- voltage, low- current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features - Fast Switching Times - Improved Inductive Ruggedness - Lower Input Capacitance - Extended...