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2N7000TU - Advanced Small-Signal MOSFET

Download the 2N7000TU datasheet PDF. This datasheet also covers the 2N7000BU variant, as both devices belong to the same advanced small-signal mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while providing rugged, reliable, and fast switching performance.

Key Features

  • Fast Switching Times.
  • Improved Inductive Ruggedness.
  • Lower Input Capacitance.
  • Extended Safe Operating Area.
  • Improved High.
  • Temperature Reliability.
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7000BU-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N7000TU
Manufacturer onsemi
File Size 214.96 KB
Description Advanced Small-Signal MOSFET
Datasheet download datasheet 2N7000TU Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N7000TA Advanced Small Signal MOSFET Fairchild Semiconductor
2N7000 N-Channel DMOS FET Microchip
2N7000 TMOS FET Transistor Motorola Inc
2N7000 N-channel MOSFET NXP
2N7000 N-Channel MOSFET NTE

Other Datasheets by onsemi

Part Number Description
2N7000 N-Channel MOSFET
2N7000BU Advanced Small-Signal MOSFET
2N7000G Small Signal MOSFET
2N7002 N-channel FET
2N7002DW N-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.