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2N7007
N-Channel Enhancement-Mode MOS Transistor
~Siliconix ~ incorporated
PRODUCT SUMMARY
V(BR)OSS rOS(ON)
10
(V)
(.n )
(A)
240
45
0.065
PACKAGE TO-92
Performance Curves: VNDN24 (See Section 7)
TO-92
BOTTOM VIEW
1 SOURCE
2 GATE 3 DRAIN
= ABSOLUTE MAXIMUM RATINGS (TC 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
2N7007
UNITS
Drain-Source Voltage Gate-Source Voltage
Vos
240
V
VGS
±40
Continuous Drain Current
Tc= 25°C
10
Tc = 100°C
0.065
0.041
A
Pulsed Drain Current 1
10M
0.260
Power Dissipation
Tc= 25°C
Po Tc = 100°C
0.4 W
0.
2N7007 Datasheet
