Microchip Technology 2N7000
The 2N7000 is an Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in MOS devices.| Part No. | 2N7000 |
|---|---|
| Datasheet | 2N7000 Download |
| Manufacturer |  Microchip Technology |
| Description | N-Channel DMOS FET |
| Buy | Stock & Price |
FEATURES
● Free from Secondary Breakdown● Low Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-Drain Diode
● High Input Impedance and High Gain
APPLICATIONS
● Motor Controls● Converters
● Amplifiers
● Switches
● Power Supply Circuits
● Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.)
GENERAL DESCRIPTION
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type See Table 3-1 for pin information. 2021 Microchip Technology Inc. 3-lead TO-92 (Top view) SOURCE DRAIN GATE DS20005695A-page 1 2N7000 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
† Drain-to-Source Voltage ........................................................................................................................
