2N7000 Key Features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- Excellent Thermal Stability
- Integral Source-Drain Diode
- High Input Impedance and High Gain
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
2N7000 | TMOS FET Transistor |
NXP Semiconductors |
2N7000 | N-channel MOSFET |
NTE Electronics |
2N7000 | N-Channel MOSFET |
Inchange Semiconductor |
2N7000 | N-Channel MOSFET |
Vishay |
2N7000 | N-Channel 60V MOSFET |