2N7000BU Datasheet
2N7000BU Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rug.
* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High-Temperature Reliability
Description
These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technolog.
2N7000BU Datasheet (onsemi)
onsemi
These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on−state resistance while providing rugge.
* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High
*Temperature Reliability
* This is a Pb
*Free Device
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDSS Drain
*to
*Source Voltage
60
V
ID
Continuous Drain Curr.