W.1 E Y. COM W M. T O W O W W C . W W . C 0L Y W L .1 . T W W B0 WW High density1 design for low 00Y M. T .100 OM W M. TRDS(ON). . cell O W C . O W W C DIM.
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WW .100Y.C M.TW WW .100Y.C M.TW WW 00Y.CO .TW WW 00Y.CO .TW W W W T .1 OM W.1 Y.C M. OM W O W C . 2N7002A W C W . SEMICONDUCTOR 0 Y W .TW W 0 0 Y W T . 1 0 M . .T 1 00 M . O 1 W M . O W N CHANNEL ENHANCEMENT MODE .C O W WW TW TECHNICAL . 00Y WW .100Y.C DATA .TW 1 WW .100Y.C M.TW M . FIELD EFFECT TRANSISTOR M O W O W O W WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O WW 00Y.CO .TW WW 00Y.CO .TW INTERFACE APPLICATION. W WW 00AND W Y.C SWITCHING W W T W.1 Y.COM W M. .1 W.1 Y.COM W O W W W C . W .T W 00 W WW .100Y M.T .100 FEATURES W.1 E Y.COM W M.T O W O W W C . W W .C 0L Y W L .1 .T W W B0 WW High density1 design for low 00Y M.T .100 OM W M.TRDS(ON). . cell O W C . O W W C DIM MILLIMETERS Y .C signal.T W TW Voltage small switch. W WW .100Y. _ 0.20 .TW A . 2.93+ WWcontroolled M .