Datasheet Summary
N-channel TrenchMOS FET
Rev. 03
- 28 April 2006 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features s Logic level threshold patible s Surface-mounted package s Very fast switching s TrenchMOS technology
1.3 Applications s Logic level translator s High-speed line driver
1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 2 Ω s ID ≤ 475 mA s Ptot ≤ 0.83 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
Simplified outline
Symbol
SOT23 mbb076
Philips Semiconductors
N-channel TrenchMOS...
