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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 1)
Drain Power Dissipation (Note 2)
Junction Temperature
VDSS VGSS
ID IDP PD Tj
60 20 300 1200 300 150
Storage Temperature Range
Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
UNIT V V
mA
mW
A G H
D
2N7002
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
E L BL
23 1
PP
M 1. SOURCE 2. GATE 3. DRAIN
DIM A B C D E G H J K L M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.
2N7002 Datasheet
