KEC 2N7002
N-channel FET
| Part No. | 2N7002 |
|---|---|
| Datasheet | 2N7002 Download |
| Manufacturer |  KEC |
| Description | N-channel FET |
| Buy | Stock & Price |
FEATURES
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature VDSS VGSS ID IDP PD Tj 60 20 300 1200 300 150 Storage Temperature Range Tstg -55 150 Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) UNIT V V mA mW A G H D 2N7002 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR E L BL 23 1 PP M 1. SOURCE 2. GATE 3. DRAIN DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. Marking WAType Name Lot No.ELECTRICAL CHARACTERISTICS
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