Datasheet4U Logo Datasheet4U.com

2N7002K - N-channel MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input / Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Pb Free / RoHS Compliant.
  • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101 D D G SOT 23 Marking: 7K S Ordering Information Part Number 2N7002K Top Mark 7K GS Package SOT-23 3L Packing Method Tape and Reel Absolute Maxi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET DIODES
2N7002K N-channel MOSFET Kexin
2N7002K N-Channel MOSFET HOTTECH
2N7002K N-Channel MOSFET MCC
2N7002K N-Channel Enhancement Mode Power MOSFET WEITRON

Other Datasheets by Fairchild (now onsemi)

Part Number Description
2N7002KW N-channel MOSFET
2N7002 N-channel FET
2N7002DW N-channel FET
2N7002L N-Channel Enhancement Mode Field Effect Transistor
2N7002MTF N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101 D D G SOT 23 Marking: 7K S Ordering Information Part Number 2N7002K Top Mark 7K GS Package SOT-23 3L Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.