Datasheet Summary
- N-Channel Enhancement Mode Field Effect Transistor
September 2014
N-Channel Enhancement Mode Field Effect Transistor
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
- Ultra-Small Surface Mount Package
- Pb Free / RoHS pliant
- ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101
SOT 23
Marking: 7K
Ordering Information
Part Number 2N7002K
Top Mark 7K
Package SOT-23 3L
Packing Method Tape and...
