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2N7002KW Datasheet

The 2N7002KW is a N-channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2N7002KW
ManufacturerFairchild Semiconductor
Overview 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Inpu.
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* Pb Free/RoHS Compliant
* ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S G SOT-323 Marking : 7KW Absolute Maxi.
Part Number2N7002KW
DescriptionN-channel MOSFET
ManufacturerPanJit Semiconductor
Overview 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design.
* RDS(ON), VGS@10V,IDS@500mA=3Ω
* RDS(ON), VGS@4.5V,IDS@200mA=4Ω
* Advanced Trench Process Technology
* High Density Cell Design For Ultra Low On-Resistance
* Very Low Leakage Current In Off Condition
* Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, L.
Part Number2N7002KW
DescriptionN-Channel MOSFET
ManufacturerJCET
Overview SOT-323 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer C film (Heat Activated Adhesive in nature) prim. z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected M$5.,1* APPLICATION z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV z '&'& &RQYHUWHU Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise.
Part Number2N7002KW
DescriptionN-Channel FET
Manufactureronsemi
Overview 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultr.
* Low On
*Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra
*Small Surface Mount Package
* These Devices are Pb
*Free and are RoHS Compliant
* ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V as per JESD22 C101 ABSOLUTE MA.

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