2N7002KDW
Overview
- RDS(ON), VGS@10V,IDS@500mA=3Ω
- RDS(ON), VGS@4.5V,IDS@200mA=4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
- ESD Protected 2KV HBM
- Component are in compliance with EU RoHS 2002/95/EC directives
