| Overview |
2N7002KDW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology • High Density Cell Desig.
* RDS(ON), VGS@10V,IDS@500mA=3Ω * RDS(ON), VGS@4.5V,IDS@200mA=4Ω
* Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Very Low Leakage Current In Off Condition * Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, L.
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