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2N7002KCE - N-Channel Enhancement Mode Field Effect Transistor

General Description

Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Applications Batte

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Datasheet Details

Part number 2N7002KCE
Manufacturer Yangzhou Yangjie
File Size 576.19 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet 2N7002KCE Datasheet

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Full PDF Text Transcription (Reference)

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2N7002KCE RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 300mA ＜2.5ohm ＜3.