2N7002KU
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
Key Features
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- ESD Rating：2000V HBM
- 150℃ operating temperature
- Lead free product 2N7002KU 60V N-Channel MOSFET Marking and Pin Assignment
