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2N7002KG8 - N-Channel MOSFET

Download the 2N7002KG8 datasheet PDF. This datasheet also covers the 2N7002KG8-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7002KG8-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N7002KG8
Manufacturer GOOD-ARK
File Size 566.75 KB
Description N-Channel MOSFET
Datasheet download datasheet 2N7002KG8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SOT-363 2N7002KG8 60V MOSFET Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.