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2N7002KCWQ - N-Channel Enhancement Mode Field Effect Transistor

General Description

Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage

Part no.

Battery operated systems Solid-state relays

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Datasheet Details

Part number 2N7002KCWQ
Manufacturer Yangzhou Yangjie
File Size 522.52 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet 2N7002KCWQ Datasheet

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2N7002KCWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.5ohm ● RDS(ON)( at VGS=4.5V) ＜3.0ohm ● Gate-Source ESD Rating Up to 2KV (HBM) General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Part no.