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2N7002KCWQ Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Yangjie Electronic

Overview: 2N7002KCWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) <2.5ohm ● RDS(ON)( at VGS=4.5V) <3.

General Description

● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Part no.

with suffix “Q” means AEC-Q101 qualified Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface:TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS Drain Current TA=25℃ @ Steady State ID TA=70℃ @ Steady State Pulsed Drain Current A IDM ±20 V 300 mA 240 1.5 A Total Power Dissipation @ TA=25℃ PD 300 mW Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 416 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55~+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002KCWQ F2 72KC.

3000 30000 120000 7“ reel S-S3916 Rev.1.1,21-Nov-22 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.

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