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2N7002T
N-channel TrenchMOS FET
Rev. 01 — 17 November 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Logic level threshold compatible s Surface-mounted package
s Very fast switching s TrenchMOS technology
1.3 Applications
s Logic level translator
s High-speed line driver
1.4 Quick reference data
s VDS ≤ 60 V s RDSon ≤ 5 Ω
s ID ≤ 300 mA s Ptot ≤ 0.83 W
2. Pinning information
Table 1: Pin 1 2 3
Pinning Description gate (G) source (S) drain (D)
Simplified outline
3
1
2
SOT23
Symbol
D G mbb076 S
Philips Semiconductors
2N7002T
N-channel TrenchMOS FET
3.
2N7002T Datasheet
