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Comchip

CDBDSC51200-G Datasheet Preview

CDBDSC51200-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBDSC51200-G
Reverse Voltage: 1200 V
Forward Current: 5 A
RoHS Device
D-PAK(TO-252)
Features
- Rated to 1200V at 5 Amps
- Zero reverse recovery current
- Zero forward recovery voltage
- Temperature independent switching behaviour.
- High temperature operation.
- High frequency operation.
Mechanical data
- Case: TO-252/D-PAK, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.268(6.80)
0.248(6.30)
0.217(5.50)
0.201(5.10)
4
0.098(2.50)
0.083(2.10)
0.024(0.60)
0.016(0.40)
0.244(6.20)
0.213(5.40)
123
0.126(3.20)
0.094(2.40)
0.039(1.00)
0.020(0.50)
0.187(4.74)
0.171(4.34)
0.090(2.29)
0.016(0.40)
0.024(0.60)
0.016(0.40)
Dimensions in inches and (millimeters)
Circuit Diagram
C(3)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
Repetitive peak reverse voltage
Tj = 25°C
VRRM
Surge peak reverse voltage
Tj = 25°C
VRSM
DC bolcking voltage
Tj = 25°C
Continuous forward current
Repetitive peak forward surge cruuent
Non-repetitive peak forward surge current
Tj = 25°C
Tj = 135°C
Tj = 158°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
VDC
IF
IFRM
IFSM
Power dissipation
TC = 25°C
TC = 110°C
PTOT
Typical thermal resistance
Junction to case
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
C(1) (2)A
Limits
1200
1200
1200
18
8.5
5
25
50
109.5
47
1.37
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC01
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:A
Page 1




Comchip

CDBDSC51200-G Datasheet Preview

CDBDSC51200-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
IF = 5A, Tj = 25°C
IF = 5A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
QC = VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj=25°C, f=1MHZ
VF
IR
QC
C
Typ.
1.45
2.05
20
50
36
475
34
33
Max.
1.7
2.5
100
200
510
44
40
Unit
V
μA
nC
pF
RATING AND CHARACTERISTIC CURVES (CDBDSC51200-G)
Fig.1 - Forward Characteristics
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF (V)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
Fig.2 - Reverse Characteristics
TJ=2157°5C°C
TJ=125°C
TJ=75°C
TJ=25°C
500 1000
Reverse Voltage, VR (V)
1500
Fig.3 - Current Derating
70
60
50
40 10% Duty
30 30% Duty
20
10 50% Duty 70% Duty D.C.
0
25 50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.4 - Capacitance Characteristics
500
400
300
200
100
0
0.01
0.1
1
10 100 1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC01
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number CDBDSC51200-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 4 Pages
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