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CDBDSC8650-G Datasheet Preview

CDBDSC8650-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBDSC8650-G
Reverse Voltage: 650 V
Forward Current: 8 A
RoHS Device
Features
- Rated to 650V at 8 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
Circuit Diagram
C(3)
D-PAK(TO-252)
0.264(6.70)
0.256(6.50)
0.215(5.46)
0.201(5.10)
3
Φ
0.051(1.30)
0.043(1.10)
12
0.023(0.58)
0.018(0.46)
0.012(0.30)
Max.
0.091(2.32)
0.089(2.28)
0.093(2.37)
0.085(2.16)
0.034(0.86)
0.026(0.66)
0.090(2.29)
0.035(0.89)
0.114(2.90)
0.100(2.55)
0.023(0.58)
0.016(0.43)
Dimensions in inches and (millimeters)
C(1) A(2)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
Repetitive peak reverse voltage
VRRM
Surge peak reverse voltage
VRSM
DC bolcking voltage
Continuous forward current
Repetitive peak forward surge cruuent
Non-repetitive peak forward surge current
TC = 25°C
TC = 135°C
TC = 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
VDC
IF
IFRM
IFSM
Power dissipation
TC = 25°C
TC = 110°C
PTOT
Typical thermal resistance
Junction to case
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
Value
650
650
650
25.5
11
8
50
100
102.4
45
1.465
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:
Page 1




Comchip

CDBDSC8650-G Datasheet Preview

CDBDSC8650-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
IF = 8A, Tj = 25°C
IF = 8A, Tj = 175°C
VR = 650V, Tj = 25°C
VR = 650V, Tj = 175°C
VR = 400V, Tj = 150°C
QC = VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 200V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj=25°C, f=1MHZ
VF
IR
QC
C
Typ.
1.45
1.75
10
15
30
550
56.5
54
Max.
1.7
2.5
100
200
588
57
54.5
Unit
V
μA
nC
pF
RATING AND CHARACTERISTIC CURVES (CDBDSC8650-G)
Fig.1 - Forward Characteristics
11
10 TJ=25°C
9
8 TJ=75°C
7 TJ=125°C
6
5 TJ=175°C
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage, VF (V)
90
80
70
60
50
40
30
20
10
0
25
Fig.3 - Current Derating
10% Duty
30% Duty
50% Duty
70% Duty
DC
50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.2 - Reverse Characteristics
0.09
0.08
0.07
0.06
0.05
0.04
TJ=175°C
TJ=125°C
0.03
0.02
0.01
0
0
TJ=75°C
TJ=25°C
100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Fig.4 - Capacitance vs. Reverse Voltage
600
550
500
450
400
350
300
250
200
150
100
50
0
0.01
0.1 1 10 100
Reverse Voltage, VR (V)
1000
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
REV:
Page 2


Part Number CDBDSC8650-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 2 Pages
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