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CDBJFSC8650-G Datasheet - Comchip

CDBJFSC8650-G Silicon Carbide Power Schottky Diode

CDBJFSC8650-G Features

* - Rated to 650V at 8 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85)

CDBJFSC8650-G-Comchip.pdf