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CDBJFSC8650-G Datasheet Preview

CDBJFSC8650-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBJFSC8650-G
Reverse Voltage: 650 V
Forward Current: 8 A
RoHS Device
Features
- Rated to 650V at 8 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220F
0.404(10.25)
0.388( 9.85)
0.130(3.30)
0.118(3.00)
0.112(2.85)
0.100(2.55)
0.264(6.70)
0.248(6.30)
0.039(1.00)
0.024(0.60)
0.055(1.40)
0.043(1.10)
0.031(0.80)
0.020(0.50)
0.602(15.30)
0.587(14.90)
0.154(3.90)
0.130(3.30)
0.539(13.70)
0.516(13.10)
0.201(5.10)
0.100(2.55)
0.126(3.20)
0.118(3.00)
0.185(4.70)
0.173(4.40)
0.110(2.80)
0.098(2.50)
0.031(0.80)
0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
TC = 135°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Junction to case
Operating junction temperature range
Storage temperature range
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
650
650
650
8
40
80
36.9
16
4.07
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC12
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:A
Page 1




Comchip

CDBJFSC8650-G Datasheet Preview

CDBJFSC8650-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Forward voltage
IF = 8 A , TJ = 25°C
IF = 8 A , TJ = 175°C
Reverse current
VR = 650V , TJ = 25°C
VR = 650V , TJ = 175°C
Total capacitive charge
VR = 400V , TJ = 150°C
QC = VR C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
Total capacitance
VR = 200V , TJ = 25°C , f = 1 MHZ
VR = 400V , TJ = 25°C , f = 1 MHZ
Symbol
VF
IR
QC
C
Typ
1.45
1.75
10
15
30
560
56.5
54
Typical Characteristics (CDBJFSC8650-G)
Max
1.7
100
Unit
V
µA
nC
pF
Fig.1 - Forward Characteristics
8
7 TJ=25°C
TJ=75°C
6
5 TJ=125°C
4
TJ=25°C
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage, VF (V)
Fig.2 - Reverse Characteristics
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
TJ=175°C
TJ=125°C
TJ=75°C
TJ=25°C
100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
70
60
50
10% Duty
40
30 30% Duty
50% Duty
20
10
70% Duty
0
25 50
D.C.
75 100 125 150
Case Tempature, TC (°C)
175
600
550
500
450
400
350
300
250
200
150
100
50
0
0.01
0.1 1 10 100
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC12
Comchip Technology CO., LTD.
1000
REV:A
Page 2


Part Number CDBJFSC8650-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 3 Pages
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