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CDBJFSC101200-G - Silicon Carbide Power Schottky Diode

Datasheet Summary

Features

  • - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.

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Datasheet Details

Part number CDBJFSC101200-G
Manufacturer Comchip
File Size 107.87 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBJFSC101200-G Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode CDBJFSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device Features - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.539(13.70) 0.516(13.10) 0.201(5.10) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.185(4.70) 0.173(4.40) 0.110(2.80) 0.098(2.50) 0.031(0.80) 0.020(0.
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