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CDBJFSC8650-G - Silicon Carbide Power Schottky Diode

Datasheet Summary

Features

  • - Rated to 650V at 8 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.53.

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Datasheet Details

Part number CDBJFSC8650-G
Manufacturer Comchip
File Size 108.61 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBJFSC8650-G Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode CDBJFSC8650-G Reverse Voltage: 650 V Forward Current: 8 A RoHS Device Features - Rated to 650V at 8 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220F 0.404(10.25) 0.388( 9.85) 0.130(3.30) 0.118(3.00) 0.112(2.85) 0.100(2.55) 0.264(6.70) 0.248(6.30) 0.039(1.00) 0.024(0.60) 0.055(1.40) 0.043(1.10) 0.031(0.80) 0.020(0.50) 0.602(15.30) 0.587(14.90) 0.154(3.90) 0.130(3.30) 0.539(13.70) 0.516(13.10) 0.201(5.10) 0.100(2.55) 0.126(3.20) 0.118(3.00) 0.185(4.70) 0.173(4.40) 0.110(2.80) 0.098(2.50) 0.031(0.80) 0.020(0.
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