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CDBJSC101700-G Datasheet Preview

CDBJSC101700-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBJSC101700-G
Reverse Voltage: 1700 V
Forward Current: 10 A
RoHS Device
Features
- Rated to 1700V at 10 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220-2 pin
0.116(2.95)
0.104(2.65)
0.409(10.40)
0.394(10.00)
0.311(7.90)
0.303(7.70)
0.152(3.85)
0.148(3.75)
0.646(16.40)
Max.
0.620(15.75)
0.600(15.25)
0.181(4.60)
0.173(4.40)
0.052(1.32)
0.048(1.23)
0.260(6.60)
0.244(6.20)
0.067(1.70)
0.045(1.14)
0.155(3.93)
0.138(3.50)
0.551(14.00)
0.512(13.00)
0.107(2.72)
0.094(2.40)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.028(0.70)
0.019(0.49)
Dimensions in inches and (millimeter)
Maximum Rating (at Ta=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
TC = 25°C
TC = 135°C
TC = 155°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Junction to case
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
1700
1700
1700
35
17
10
50
90
192
82
0.78
-55 ~ +175
-55 ~ +175
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice. REV:
QW-BSCxx
Comchip Technology CO., LTD.
Page 1




Comchip

CDBJSC101700-G Datasheet Preview

CDBJSC101700-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
Conditions
IF = 10 A , TJ = 25°C
IF = 10 A , TJ = 175°C
VR = 1700V , TJ = 25°C
VR = 1700V , TJ = 175°C
VR = 1200V , TJ = 150°C
QC = VR C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
VR = 400V , TJ = 25°C , f = 1 MHZ
VR = 800V , TJ = 25°C , f = 1 MHZ
Symbol
VF
IR
QC
C
Typ
1.4
2.1
30
50
122
1400
90
66
Max
1.7
3
100
200
-
1600
120
80
Unit
V
µA
nC
pF
Typical Characteristics (CDBJSC101700-G)
Fig.1 - Forward Characteristics
14
12
10
8
6
4
2
0
0
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0.5 1.0 1.5 2.0
Forward Voltage, VF (V)
2.5
Fig.2 - Reverse Characteristics
90
75
60
45
30
15
0
0
TJ=75°C
TJ=125°C
TJ=175°C
TJ=25°C
250 500 750 1000 1250 1500 1750 2000
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
120
110
100
90
10% Duty
80
70
60 30% Duty
50 50% Duty
40
30
20 70% Duty
10
D.C.
0
25 50 75 100 125 150 175
1600
1400
1200
1000
800
600
400
200
0
0.01
0.1
1
10 100 1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice. REV:
QW-BSCxx
Comchip Technology CO., LTD.
Page 2


Part Number CDBJSC101700-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 2 Pages
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