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CDBJSC3650-G - Silicon Carbide Power Schottky Diode

Datasheet Summary

Features

  • - Rated to 650V at 3 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20) 0.067(.

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Datasheet preview – CDBJSC3650-G

Datasheet Details

Part number CDBJSC3650-G
Manufacturer Comchip
File Size 109.01 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBJSC3650-G Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode CDBJSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20) 0.067(1.70) 0.045(1.14) 0.155(3.93) 0.138(3.50) 0.551(14.00) 0.512(13.00) 0.107(2.72) 0.094(2.40) 0.035(0.88) 0.024(0.61) 0.203(5.15) 0.195(4.95) 0.028(0.70) 0.019(0.
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