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CDBJSC101700-G - Silicon Carbide Power Schottky Diode

Datasheet Summary

Features

  • - Rated to 1700V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 pin 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20).

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Datasheet preview – CDBJSC101700-G

Datasheet Details

Part number CDBJSC101700-G
Manufacturer Comchip
File Size 98.23 KB
Description Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBJSC101700-G Datasheet
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Full PDF Text Transcription

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Silicon Carbide Power Schottky Diode CDBJSC101700-G Reverse Voltage: 1700 V Forward Current: 10 A RoHS Device Features - Rated to 1700V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 pin 0.116(2.95) 0.104(2.65) 0.409(10.40) 0.394(10.00) 0.311(7.90) 0.303(7.70) 0.152(3.85) 0.148(3.75) 0.646(16.40) Max. 0.620(15.75) 0.600(15.25) 0.181(4.60) 0.173(4.40) 0.052(1.32) 0.048(1.23) 0.260(6.60) 0.244(6.20) 0.067(1.70) 0.045(1.14) 0.155(3.93) 0.138(3.50) 0.551(14.00) 0.512(13.00) 0.107(2.72) 0.094(2.40) 0.035(0.88) 0.024(0.61) 0.203(5.15) 0.195(4.95) 0.028(0.70) 0.019(0.
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