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Comchip Technology
Comchip Technology

2N3906-G Datasheet Preview

2N3906-G Datasheet

General Purpose transistor

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2N3906-G pdf
General Purpose Transistor
2N3906-G (PNP)
RoHS Device
SMD Diodes Specialist
Features
-PNP silicon epitaxial planar transistor for
switching and amplifier application.
-As complementary type, the NPN transistor
2N3904-G is recommended.
-This transistor is available in the SOT-23
case with the type designation MMBT3906-G.
Collector
3
www.DataSheet4U.com
2
Base
1
Emitter
TO-92
0.1 85(4.70 )
0.1 73(4.40 )
0.020(0.51)
0.014(0.36)
0.0 22(0.55 )
0.0 15(0.38 )
0.135(3.43) Min.
0.055(1.14)
0.043(1.10)
0.015(0.38) Max.
0.063(1.60) Max.
0.0 50(1.27 ) Typ.
0.1 04(2.64 )
0.0 96(2.44 )
123
1. Emitter
2. Base
3. Collector
Dimensions in inches and (millimeter)
Maximum Ratings(TA=25oC unless otherwise noted)
Parameter
Symbol
Min
Max
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
VCBO
VCEO
VEBO
IC
-40
-40
-5
-0.2
Col lec tor di ssipa tion
St or ag e tempe rat ur e an d jun ction tempe rat ur e
PC
TSTG , TJ
-55
0. 62 5
+1 50
Unit
V
V
V
A
W
O
C
QW-BTR05
REV:A
Page 1



Comchip Technology
Comchip Technology

2N3906-G Datasheet Preview

2N3906-G Datasheet

General Purpose transistor

No Preview Available !

2N3906-G pdf
General Purpose Transistor
SMD Diodes Specialist
Electrical Characteristics (at TA=25 OC unless otherwise noted)
Parameter
Conditions
Symbol Min
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
IC =-100μA , IE=0
IC =-1mA , IB=0
IE =-100μA , IC=0
VCB=-40V , IE=0
VCE=-40V , IB=0
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
-40
-40
-5
Emitter cut-off current
VEB=-5V , IC=0
IEBO
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Output capacitance
Input capacitance
Noise figure
Transition frequency
Delay time
Rise time
Storage time
Fall time
VCE=-1V , IC=-0.1mA
VCE=-1V , IC=-1mA
VCE=-1V , IC=-10mA
VCE=-1V , IC=-50mA
VCE=-1V , IC=-100mA
IC=-10mA , IB=-1mA
IC=-50mA , IB=-5mA
IC=-10mA , IB=-1mA
IC=-50mA , IB=-5mA
VCB=-5V , IE=0 , f=100KHz
VEB=-0.5V , IE=0 , f=100KHz
VCE=-5V , IC=100μΑ
F=1KHz , RS=1KΩ
VCE=-20V , IC=-10mA
f=100MHz
VCC=-3V , VBE=-0.5V
IC=-10mA , IB1=-1mA
VCC=-3V , IC=-10mA
IB1=IB2=-1mA
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VBE(sat)
60
80
100
60
30
-0.65
Cobo
Cibo
NF
fT 250
td
tr
ts
tf
Max
-0.1
-0.1
-0.1
300
-0.25
-0.4
-0.85
-0.95
4.5
10
4
35
35
225
75
Unit
V
V
V
µA
µA
µA
V
V
V
V
pF
pF
dB
MHz
nS
nS
nS
nS
Classification of hFE(3)
Rank
Range
O
100-200
Y
200-300
G
300-400
QW-BTR05
REV:A
Page 2


Part Number 2N3906-G
Description General Purpose transistor
Maker Comchip Technology
Total Page 3 Pages
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2N3906-G pdf
2N3906-G Datasheet PDF
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