SMD Ultra Fast Reco ver y Rect ifier s
CURC301-G Thru. CURC307-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 3.0 Amp
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 50~75nS.
-Low leakage current.
DO-214AB (SMC)
0.124(3.15)
0.108(2.75)
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
Mechanical data
-Case: JEDEC DO-214AB, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
0.103(2.62)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Symbol
CURC
301-G
VRRM
50
CURC
302-G
100
CURC
303-G
200
CURC
304-G
400
CURC
305-G
600
CURC
306-G
800
CURC
307-G
Units
1000 V
Max. DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Max. RMS voltage
VRMS 35 70 140 280 420 560 700 V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
100 A
Max. average forward current
IO
3.0 A
Max. instantaneous forward voltage at
3.0A
VF
1.0 1.3 1.7 V
Reverse recovery time Trr 50
75 nS
Max. DC reverse current at TA=25OC
rated DC blocking voltage TA=125OC
www.DaMtaaSxh. teheetr4mUa.cl oremsistance (Note 1)
Max. operating junction temperature
IR
RθJL
TJ
5.0 μA
150
20 OC/W
150 OC
Storage temperature
TSTG
-55 to +150
OC
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm2 square land area.
QW-BU004
Comchip Technology CO., LTD.
REV:A
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