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FPD6836P70 - Low-Noise High-Frequency Packaged pHEMT

General Description

 The FPD6836P70 is a low parasitic, surface   mountable packaged depletion mode    pseudomorphic  High  Electron  Mobility  Transistor   (pHEMT)  optimised  for  low‐noise,  high‐frequency   applications.

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Datasheet Details

Part number FPD6836P70
Manufacturer Compound Photonics
File Size 270.33 KB
Description Low-Noise High-Frequency Packaged pHEMT
Datasheet download datasheet FPD6836P70 Datasheet

Full PDF Text Transcription for FPD6836P70 (Reference)

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FPD6836P70 Low‐Noise High‐Frequency Packaged pHEMT GENERAL DESCRIPTION Package ‐ P70 The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudom...

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is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low‐noise, high‐frequency applications. Key Characteristics Applications  22dBm Output Power (P1dB)  15dB Gain at 5.8GHz  0.8dB Noise Figure at 5.8GHz  32dB Output IP3 at 5.8GHz  45% Power‐Added Efficiency at 5.8GHz  Usable Gain to 18GHz  Gain blocks and medium power stages  WiMax (2GHz to 11GHz)  WLAN 802.11a (5.