| Description | 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these www..com devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is o... |
| Features |
n Storage Temperature Range
2N2646
30 30 50 2 300
2N2647
V V mA A mW
150 -55 to +175 °C
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
IEO V(BR)B1E
Ratings
Emitter Reverse Current Base 1 – Emitter Breakdown Voltage IE =100 µA 2N2646 – 2N2647 Min Max 12 µA V 1/2 30 COMSET SEMICONDUCTORS 2N2646 2N2647 2N2646 –... |
| Datasheet |
 2N2646 Datasheet 87.20KB |
