TIC226B - SILICON BIDIRECTIONAL TRIODE THYRISTOR

This page provides the datasheet information for the TIC226B, a member of the TIC226D SILICON BIDIRECTIONAL TRIODE THYRISTOR family.

Description

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

Comset Semiconductor

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Datasheet Details

Part number	TIC226B
Manufacturer	Comset Semiconductor
File Size	230.22 KB
Description	SILICON BIDIRECTIONAL TRIODE THYRISTOR
Datasheet	TIC226B Datasheet
Additional preview pages of the TIC226B datasheet.

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Other Datasheets by Comset Semiconductor

TIC226A - SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226C - SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226D - SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226E - SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226M - SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226N - SILICON BIDIRECTIONAL TRIODE THYRISTOR
TIC226S - SILICON BIDIRECTIONAL TRIODE THYRISTOR

Full PDF Text Transcription

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SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

Published: Mar 6, 2011 |