Datasheet Details
| Part number | TIC226 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.52 KB |
| Description | Triac |
| Datasheet | TIC226-INCHANGE.pdf |
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Overview: isc Triacs INCHANGE Semiconductor TIC226series.
| Part number | TIC226 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.52 KB |
| Description | Triac |
| Datasheet | TIC226-INCHANGE.pdf |
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·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC226D 400 VDRM Repetitive voltage peakoff-state TIC226M TIC226S 600 700 V TIC226N 800 TIC226D 400 VRRM Repetitive voltage peakreverse TIC226M TIC226S 600 700 V TIC226N 800 IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A PGM Peak gate power PW≤200μs 2.2 W PG(AV) Average gate power 0.9 W Tj Operating Junction temperature 110 ℃ Tstg Storage temperature -40 ~+125 ℃ isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor TIC226series THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient TYP MAX UNIT 1.8 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ IGT Gate trigger current Ⅱ Vsupply = 12 V†;
RL= 10Ω;
tp(g) >20μs Ⅲ Ⅳ IH Holding current Vsupply = 12 V†,IG= 0 initial ITM=100mA VGT Gate trigger voltageall quadrant Vsupply = 12 V†;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIC226 | SILICON TRIACS | BOURNS |
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TIC226A | SILICON BIDIRECTIONAL TRIODE THYRISTOR | Comset Semiconductor |
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TIC226B | SILICON BIDIRECTIONAL TRIODE THYRISTOR | Comset Semiconductor |
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TIC226C | SILICON BIDIRECTIONAL TRIODE THYRISTOR | Comset Semiconductor |
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TIC226D | SILICON TRIACS | BOURNS |
| Part Number | Description |
|---|---|
| TIC225 | Triac |
| TIC216 | Triac |
| TIC246 | Triac |
| TIC106C | Thyristor |
| TIC106S | Thyristor |
| TIC116N | Thyristor |
| TIC116S | Thyristor |
| TIC126S | Thyristor |