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TIC226 - Triac

General Description

8A RMS ,70A Peak Glass passivated Wafer 400V to 800V off-state Voltage Max IGT of 50mA(Quadrants 1-3) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN

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isc Triacs INCHANGE Semiconductor TIC226series DESCRIPTION ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50mA(Quadrants 1-3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIC226D 400 VDRM Repetitive voltage peakoff-state TIC226M TIC226S 600 700 V TIC226N 800 TIC226D 400 VRRM Repetitive voltage peakreverse TIC226M TIC226S 600 700 V TIC226N 800 IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A PGM Peak gate power PW≤200μs 2.2 W PG(AV) Average gate power 0.