2N2326
2n2322 to 2n2326 SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in m A/µA signal or detection circuits pliance to Ro HS.
MAXIMUM RATINGS (- )
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
VRRM(REP) VRSM(NONREP)
Ratings
Peak reverse blocking voltage (- ) Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. Peak Gate Power
- Forward Average Gate Power Forward Peak Gate Current
- Forward Peak Gate Voltage
- Forward Peak Gate Voltage
- Reverse Operating Junction Temperature Range Storage Temperature Range
2N2322 25 40 http://..net/
2N2323 50 75
2N2324 100 150 1.6
2N2325 150 225
2N2326 200 300
Unit V V A
IT(RMS)
ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG
15 0.1 0.01 0.1 6.0 6.0 -65 to +125
A W W A V V °C
-65 to +150
12/11/2012
SET SEMICONDUCTORS
1|3 datasheet pdf
- http://..net/
2n2322 to 2n2326
ELECTRICAL...
