2N2327 - (2N2327 - 2N2329) SILICON THYRISTORS

Comset Semiconductors

Datasheet Details

Part number	2N2327
Manufacturer	Comset Semiconductors
File Size	129.49 KB
Description	(2N2327 - 2N2329) SILICON THYRISTORS
Datasheet	2N2327 Datasheet

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Other Datasheets by Comset Semiconductors

Part Number	Description
2N2322	(2N2322 - 2N2326) SILICON THYRISTORS
2N2323	(2N2322 - 2N2326) SILICON THYRISTORS
2N2324	(2N2322 - 2N2326) SILICON THYRISTORS
2N2325	(2N2322 - 2N2326) SILICON THYRISTORS
2N2326	(2N2322 - 2N2326) SILICON THYRISTORS

Full PDF Text Transcription (Reference)

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2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NONREP) Ratings Peak reverse blocking voltage (1) Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. Peak Gate Power – Forward Average Gate Power - Forward Peak Gate Current – Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Junction Temperature Range Storage Temperature Range 2N2327 250 350 http://www.DataSheet4U.net/ 2N2328 300 400 1.