2N2329 Datasheet | Comset Semiconductors

2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in m A/µA signal or detection circuits pliance to Ro HS. MAXIMUM RATINGS (- ) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NONREP) Ratings Peak reverse blocking voltage (1) Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. Peak Gate Power - Forward Average Gate Power - Forward Peak Gate Current - Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Junction Temperature Range Storage Temperature Range 2N2327 250 350 http://..net/ 2N2328 300 400 1.6 400 500 Unit IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG 15 0.1 0.01 0.1 6.0 6.0 -65 to +125 -65 to +150 V V °C 12/11/2012 SET SEMICONDUCTORS 1|3 datasheet pdf - http://..net/ 2N2327 thur 2N2329 ELECTRICAL CHARACTERISTICS (- ) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM IDRM Ratings Peak Forward Blocking Voltage Min : (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Forward « on » Voltage IT =1.0 A Peak IT =1.0 A Peak TC =85°C Gate Trigger Current (2) Anode Voltage=6.0 Vdc, RL=100Ω Anode Voltage=6.0 Vdc, RL=100Ω TC=-65°C Gate Trigger Voltage Anode Voltage=6.0 V, RL=100Ω Anode Voltage=6.0 V, RL=100Ω TC=-65°C VDRM = Rated, RL=100Ω TJ=125°C Holding Current Anode Voltage=6.0 V Anode Voltage=6.0 V TC=-65°C Anode Voltage=6.0 V TC=125°C 2N2327 2N2328...