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PNP 2N6053 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6055. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO VEBO IC ICM IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation Junction Storage Temperature
Ratings
IE=0 IB=0 IC=0
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Value
2N6053 2N6053 -60 -60 -5.0 -8 -16 -120 100 200 -65 to +200
Unit
V V V A A mA W °C
@ TC < 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.
2N6053 Datasheet
