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Comset Semiconductors
Comset Semiconductors

BD203 Datasheet Preview

BD203 Datasheet

(BD201 / BD203) SILCON EPITAXIAL-BASE POWER TRANSISTORS

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BD203 pdf
NPN BD201 – BD203
SILCON EPITAXIAL-BASE POWER TRANSISTORS
The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package.
They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W
into 4or 8load.
PNP complements are BD202 and BD204
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCEO
VCBO
VEBO
IC
ICSM
IB
PD
TJ
TStg
Collector-Emitter Voltage
BD201
BD203
Collector-Base Voltage
www.DataSheet.net/
BD201
BD203
Emitter-Base Voltage
Collector Current
IC
ICM
Collector Current (non-repetitive peak value,tp max.2 ms)
Base Current
Total Device Dissipation @ TC = 25°
Junction Temperature
Storage Temperature range
45
60
60
60
5.0
8
12
25
3
60
150
-65 to +200
Unit
V
V
V
A
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-mb
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
70
2.08
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/



Comset Semiconductors
Comset Semiconductors

BD203 Datasheet Preview

BD203 Datasheet

(BD201 / BD203) SILCON EPITAXIAL-BASE POWER TRANSISTORS

No Preview Available !

BD203 pdf
NPN BD201 – BD203
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
ICEO
Collector Cutoff Current
VCE=30 V, IB=0V
BD201
BD203
-
- 0.2 mA
ICBO
Collector Cutoff Current
VCB=40 V, IE=0V
Tj=150°C
BD201
BD203
-
-
1 mA
IEBO
Emitter Cutoff Current
VBE=5 V, IC=0
BD201
BD203
-
- 0.5 mA
VCBO
Collector-Base
Voltage
Breakdown
IC=1 m A, IE= 0
BD201
BD203
60
-
-V
VCEO
Collector Emitter
Breakdown Voltage (*)
IC=200 m A, IB= 0
BD201 45
BD203 60
-
-
-
-
V
VEBO
Emitter Base Breakdown
Voltage
IE =1 mA, IC =0
BD201
BD203
5
-
-
V
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=3 A, IB=300 mA
www.DataSheet.net/
IC=6 A, IB=600 mA
BD201
BD203
BD201
BD203
-
-
-1
- 1.5 V
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC=6 A, IB=600 mA
BD201
BD203
-
-
2
VBE
Base Emitter Voltage (*) IC=3 A, VCE=2 V
BD201
BD203
-
- 1.5 V
hFE DC Current Gain (*)
fhfe Cut-off frequency
IC=3 A, VCE=2 V
BD201
IC=2 A, VCE=2 V
BD203
IC=300 mA, VCE=3 V
BD201
BD203
30
30
25
-
-
-
-
-
-
- KHz
fT
Transition frequency
IC=300 mA, VCE=3 V BD201
f= 1MHz
BD203
7
-
- MHz
Is/b
Forward bias second
breakdown collector
current
VCE=40 V,tp= 0.1 s
Tamb= 25 °C
BD201
BD203
1.5
-
-A
hFE1/hFE2 DC current gain
IC=1 A, VCE=2 V
BD201
BD203
2.5
-
-
-
ton Turn-on time
Toff Turn-off time
ICon=2 A
IBon = -IBoff =200 mA
BD201
BD203
BD201
BD203
-
-
-
-
1
µs
4
(*) Pulse conditions : tp < 300 µs, δ =2%
18/10/2012
COMSET SEMICONDUCTORS
3/3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number BD203
Description (BD201 / BD203) SILCON EPITAXIAL-BASE POWER TRANSISTORS
Maker Comset Semiconductors
Total Page 3 Pages
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BD203 pdf
BD203 Datasheet PDF
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