Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F
- plement to Type BD202F/204F
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor...
