Inchange Semiconductor BD203F
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD203F |
|---|---|
| Datasheet | BD203F Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F●Complement to Type BD202F/204F
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201F 60 VCBO Collector-Base Voltage V BD203F 60 BD201F 45 VCEO Collector-Emitter Voltage V BD203F 60 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.3 ℃/W BD201F/203F isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD201F/203FELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PAR...