Datasheet Details
| Part number | BD204 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.17 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD204 BD202 Datasheet (PDF) |
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Overview: isc Silicon PNP Power Transistor BD202/204.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BD204 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.17 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD204 BD202 Datasheet (PDF) |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complement to Type BD201/203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD202 -60 VCBO Collector-Base Voltage V BD204 -60 BD202 -45 VCEO Collector-Emitter Voltage V BD204 -60 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak tp≤10ms -12 A ICSM Collector Current-Peak tp≤2ms -25 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage BD202 BD204 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain BD202 BD204 fT Current-Gain—Bandwidth Product Switching Times ton Turn-On Time toff Turn-Off Time CONDITIONS IC= -50mA ;IB= 0 IC= -1mA ;IE= 0 IE= -1mA ;IC= 0 IC= -3A;
IB= -0.3A IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD204 | PNP PLASTIC POWER TRANSISTORS | CDIL |
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BD204 | SILICON POWER TRANSISTOR | SavantIC |
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BD204 | SILCON EPITAXIAL-BASE POWER TRANSITORS | Comset Semiconductors |
| Anaren | BD2040J50100AHF | PRELIMINARY Ultra Low Profile 0805 Balun | Anaren |
| Facon | BD204115 | Single Phase Moulded Bridges | Facon |
| Part Number | Description |
|---|---|
| BD201 | Silicon NPN Power Transistor |
| BD202 | Silicon PNP Power Transistor |
| BD203 | Silicon NPN Power Transistor |
| BD233 | Silicon NPN Power Transistors |
| BD234 | Silicon PNP Power Transistor |
| BD235 | Silicon NPN Power Transistors |
| BD236 | Silicon PNP Power Transistor |
| BD237 | Silicon NPN Power Transistors |
| BD238 | Silicon PNP Power Transistor |
| BD243 | Silicon NPN Power Transistor |