| Part number | BD201 |
|---|---|
| Datasheet | BD201_InchangeSemiconductor.pdf |
| File Size | 211.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·plement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD201 | SILCON EPITAXIAL-BASE POWER TRANSISTORS | Comset Semiconductors |
 |
BD201F | NPN Transistor | INCHANGE |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD202 | Silicon PNP Power Transistor |
| BD203 | Silicon NPN Power Transistor |
| BD204 | Silicon PNP Power Transistor |
| BD233 | Silicon NPN Power Transistors |
| BD234 | Silicon PNP Power Transistor |
| BD235 | Silicon NPN Power Transistors |
| BD236 | Silicon PNP Power Transistor |
| BD237 | Silicon NPN Power Transistors |
| BD238 | Silicon PNP Power Transistor |
| BD243 | Silicon NPN Power Transistor |
