BD201 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 Complement to Type BD202/204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hi-fi equipment delivering an output of 15 to 15 W i

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Datasheet Details

Part number	BD201
Manufacturer	Inchange Semiconductor
File Size	211.40 KB
Description	Silicon NPN Power Transistor
Datasheet	BD201 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD202	Silicon PNP Power Transistor
BD203	Silicon NPN Power Transistor
BD204	Silicon PNP Power Transistor
BD233	Silicon NPN Power Transistors
BD234	Silicon PNP Power Transistor

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isc Silicon NPN Power Transistor BD201/203 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.