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BD201F - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F Complement to Type BD202F/204F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hi-fi equipment delivering an output of 15 to 15

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.