| Part number | BD201F |
|---|---|
| Datasheet | BD201F-INCHANGE.pdf |
| File Size | 209.47 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·plement to Type BD202F/204F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD201 | Silicon NPN Power Transistor | Inchange Semiconductor |
 |
BD201 | SILCON EPITAXIAL-BASE POWER TRANSISTORS | Comset Semiconductors |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD202F | PNP Transistor |
| BD203F | NPN Transistor |
| BD204F | PNP Transistor |
| BD214 | PNP Transistor |
| BD224 | PNP Transistor |
| BD226 | Silicon NPN Power Transistor |
| BD227 | PNP Transistor |
| BD228 | Silicon NPN Power Transistor |
| BD229 | PNP Transistor |
| BD230 | Silicon NPN Power Transistor |
