BDW83 Datasheet | Comset Semiconductors

NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The plementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D pliance to Ro HS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D Value 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage IB = 0 .Data Sheet.net/ VCBO Collector- Emitter Voltage IE = 0 IC = 0 VEBO IC IB Pt TJ TStg Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature V A A W °C °C 25°C case temperatur 25°C free aire temperatur THERMAL CHARACTERISTICS Symbol Rth JC Rth JA Ratings Value 0.83 35.7 Unit °C/W Junction to Case Thermal Resistance Junction to Free Air Thermal Resistance 23/10/2012 SET SEMICONDUCTORS 1|3 Datasheet pdf - http://..co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW83 BDW83A IC=30 m A BDW83B IB=0 BDW83C BDW83D BDW83 IB=0, VCE=30 V IB=0, VCE=30 V BDW83A IB=0, VCE=40 V BDW83B IB=0, VCE=50 V BDW83C IB=0, VCE=60 V BDW83D IE= 0, VCB=45 V BDW83 IE= 0, VCB=60 V BDW83A IE= 0, VCB=80 V BDW83B IE= 0, VCB=100 V BDW83C IE= 0, VCB=120 V BDW83D IE= 0, VCB=45 V BDW83 Tcase = 150°C IE= 0, VCB=60 V BDW83A Tcase = 150°C IE= 0, VCB=80 V BDW83B Tcase = 150°C IE= 0, VCB=100 V BDW83C Tcase = 150°C IE= 0, VCB=120 V BDW83D Tcase = 150°C VEB=5.0 V, IC=0 IC=6 A , VCE=3.0 V IC=15 A , VCE=3.0 V IC=6 A , IB=12 m A IC=15 A , IB=150 m A IC=6 A , IB=3...