Collector Current -IC= 15A
High DC Current Gain-hFE= 750(Min)@ IC= 6A
Complement to Type BDW84/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose amplifier and low speed
switching applications
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDW83
45
VCER
Collector-Emitter Voltage
BDW83A
60
BDW83B
80
BDW83C
100
BDW83
45
VCEO
Collector-Emitter Voltage
BDW83A
60
BDW83B
80
BDW83C
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
15
IB
Base Current-Continuous
0.5
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
3.