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BDW83 - NPN Transistor

General Description

Collector Current -IC= 15A High DC Current Gain-hFE= 750(Min)@ IC= 6A Complement to Type BDW84/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 BDW83 45 VCEO Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current-Continuous 0.5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.