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BDW84C - PNP Transistor

General Description

Collector Current -IC= -15A High DC Current Gain-hFE= 750(Min)@ IC= -6A Complement to Type BDW83C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABS

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isc Silicon PNP Darlington Power Transistor isc Product Specification BDW84C DESCRIPTION ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 3.